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  ? 2001-2012 microchip technology inc. ds21385d-page 1 features ldo with integrated microcontroller reset monitor functionality low input supply current (80 a, typical) very low dropout voltage 10 sec (typ.) wake-up time from shdn 300 ma output current standard or custom output and detected voltages power-saving shutdown mode bypass input for quiet operation separate input for detected voltage 140 msec minimum reset output duration space-saving msop package specified junction temperature range: -40c to +125c applications battery-operated systems portable computers medical instruments pagers cellular / gsm / phs phones related literature an765, using microchips micropower ldos, ds00765. an766, pin-compatible cmos upgrades to bipolar ldos, ds00766. an792, a method to determine how much power a sot23 can dissipate in an application, ds00792. package type general description the tc1300 combines a low dropout regulator and a microcontroller reset monitor in an 8-pin msop pack- age. total supply current is 80 a (typical), 20 to 60 times lower than bipolar regulators. the tc1300 has a precise output with a typical accu- racy of 0.5%. other key features include low noise operation, low dropout voltage and internal feed- forward compensation for fast response to step changes in load. the tc1300 has both over-tempera- ture and over-current protection. when the shutdown control (shdn ) is low, the regulator output voltage falls to zero, reset output remains valid and supply cur- rent is reduced to 30 a (typical). the tc1300 is rated for 300 ma of output current and stable with a 1 f out- put capacitor. an active-low r eset is asserted when the detected voltage (v det ) falls below the reset voltage threshold. the reset output remains low for 300 msec (typical) after v det rises above reset threshold. the tc1300 also has a fast wake-up response time (10 sec., typical) when released from shutdown. typical application circuit 12 3 4 v in v det 5 6 7 8 nc v out gnd bypass shdn reset tc1300vua msop tc1300 12 3 4 5 6 7 8 v out c bypass 470 pf (optional) shutdown control (from power control logic) gnd bypass v in shdn v out c 1 1f reset reset v det nc c 2 1f battery v det + tc1300 300 ma cmos ldo with shutdown, bypass and independent delayed reset function downloaded from: http:///
tc1300 ds21385d-page 2 ? 2001-2012 microchip technology inc. 1.0 electrical characteristics absolute maximum ratings* input voltage ............................................. .......................6.5v output voltage ................................. (v ss - 0.3) to (v in + 0.3) power dissipation ......................... internally limited (note 6) operating junction temperature, t j ....... C 40c < t j < 150c maximum junction temperature, tj .............................. 150c storage temperature...................................C 65c to +150c maximum voltage on any pin ............. (v ss -0.3) to (v in +0.3) *notice: stresses above those listed under maximum rat- ings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this spec ification is not implied. expo- sure to maximum rating conditions for extended periods may affect device reliability. pin descriptions pin description reset reset output remains low while v det is below the reset voltage threshold and for 300 msec after v det rises above reset thesh- old. v out regulated voltage output gnd ground terminal bypass reference bypass input. connecting an optional 470 pf to this input further reduces output noise. shdn shutdown control input. the regulator is fully enabled when a logic high is applied to this input. the regulator enters shutdown when a logic low is applied to this input. during shut- down, regulator output voltage falls to zero, reset output remains valid and supply cur- rent is reduced to 30 a (typ.). nc no connect v in power supply input v det detected input voltage. v det and v in can be connected together. electrical characteristics v in = v out + 1v, i l = 0.1 ma, c l = 3.3 f, shdn > v ih , t a = 25c, unless otherwise noted. boldface type specifications apply for junction temperature (note 8) of -40c to +125c. parameters sym min typ max units conditions input operating voltage v in 2.7 6.0 v note 7 maximum output current i out max 300 m a output voltage v out v r - 2.5% v r 0.5% v r + 2.5% v note 1 v out temperature coefficient ? v out / ? t 25 ppm/c note 2 line regulation ? v out / ? v in 0 . 0 2 0.35 %( v r + 1v) < v in < 6v load regulation ? v out /v out 0 . 5 2.0 %i l = 0.1 ma to i out max, note 3 note 1: v r is the regulator output voltage setting. 2:3: regulation is measured at a constant junction temperature usin g low duty cycle pulse testing. load regulation is tested over a load range from 0.1 ma to the maximum specified output current. changes in output voltage due to heating effects are covered by the thermal regulation specification. 4: dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1v differential. 5: thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. specifications are for a current pulse equal to i l max at v in = 6v for t = 10 msec. 6: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem- perature and the thermal resistance from junction-to-air (i.e. t a , t j , ? ja ). exceeding the maximum allowable power dissi- pation causes the device to initiate thermal shutdown. please see section 4.0, thermal considerations, of this data sheet for more details. 7: the minimum v in has to meet two conditions: v in ? 2.7v and v in ? (v r + v dropout ). 8: the junction temperature of the device is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. the test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. tcv out v outmax v outmin ? ?? 10 6 ? v out t ?? ------------------------------------------------------------------------------------- - = downloaded from: http:///
? 2001-2012 microchip technology inc. ds21385d-page 3 tc1300 dropout voltage (note 4) v in C v out 1 70 210 30 130390 mv i l = 0.1 ma i l = 100 ma i l = 300 ma supply current i ss1 8 0 160 a shdn = v ih shutdown supply current i ss2 3 0 60 a shdn = 0v power supply rejection ratio psrr 60 db f ? 1 khz, c bypass = 1 nf output short circuit current i out sc 800 1200 ma v out = 0v thermal regulation ? v out / ? p d 0.04 %/w note 5 output noise en 900 nv/hz f < 1 khz, c out = 1 f, r load = 50 ??? c bypass = 1 nf wake-up time (from shutdown mode) t wk 1 0 2 0 s e c c in = 1 f, v in = 5v, c out = 4.7 f, i l = 30 ma, see figure 3-2 settling time (from shutdown mode) ts 50 sec c in = 1 f, v in = 5v c out = 4.7 f i l = 30 ma, see figure 3-2 thermal shutdown die temperature t sd 150 c thermal shutdown hysteresis t hys 1 0 c thermal resistance junction to case rthetaja 200 c/watt eia/jedec jesd51-751-7 4- layer board shdn input high threshold v ih 45 % v in v in = 2.5v to 6.0v shdn input low threshold v il 15 %v in v in = 2.5v to 6.0v electrical characteristics (continued) v in = v out + 1v, i l = 0.1 ma, c l = 3.3 f, shdn > v ih , t a = 25c, unless otherwise noted. boldface type specifications apply for junction temperature (note 8) of -40c to +125c. parameters sym min typ max units conditions note 1: v r is the regulator output voltage setting. 2:3: regulation is measured at a constant junction temperature usi ng low duty cycle pulse testing. load regulation is tested over a load range from 0.1 ma to the maximum specified output current. changes in output voltage due to heating effects are covered by the thermal regulation specification. 4: dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1v differential. 5: thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. specifications are for a current pulse equal to i l max at v in = 6v for t = 10 msec. 6: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem- perature and the thermal resistance from junction-to-air (i.e. t a , t j , ? ja ). exceeding the maximum allowable power dissi- pation causes the device to initiate thermal shutdown. please see section 4.0, thermal considerations, of this data sheet for more details. 7: the minimum v in has to meet two conditions: v in ? 2.7v and v in ? (v r + v dropout ). 8: the junction temperature of the device is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. the test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. tcv out v outmax v outmin ? ?? 10 6 ? v out t ?? ------------------------------------------------------------------------------------- - = downloaded from: http:///
tc1300 ds21385d-page 4 ? 2001-2012 microchip technology inc. reset output voltage range v det 1.0 1.2 6.0 6.0 vt a = 0c to +70c t a = C 40c to +125c reset threshold v th 2.59 2.63 2.66 v tc1300r-xx, t a = +25c 2.55 2.70 tc1300r-xx, t a = C 40c to +125c 2.36 2.40 2.43 tc1300y-xx, t a = +25c 2.32 2.47 tc1300y-xx, t a = C 40c to +125c reset threshold tempco ? v th / ? t 30 ppm/c v det to reset delay t rpd 160 sec v det = v th to (v th C 100 mv) reset active timeout period t rpu 140 300 560 msec reset output voltage low v ol 0 . 3v v det = v th min, i sink = 1.2 ma reset output voltage high v oh 0.8 v det v v det > v th max, i source = 500 a electrical characteristics (continued) v in = v out + 1v, i l = 0.1 ma, c l = 3.3 f, shdn > v ih , t a = 25c, unless otherwise noted. boldface type specifications apply for junction temperature (note 8) of -40c to +125c. parameters sym min typ max units conditions note 1: v r is the regulator output voltage setting. 2:3: regulation is measured at a constant junction temperature usin g low duty cycle pulse testing. load regulation is tested over a load range from 0.1 ma to the maximum specified output current. changes in output voltage due to heating effects are covered by the thermal regulation specification. 4: dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1v differential. 5: thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. specifications are for a current pulse equal to i l max at v in = 6v for t = 10 msec. 6: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem- perature and the thermal resistance from junction-to-air (i.e. t a , t j , ? ja ). exceeding the maximum allowable power dissi- pation causes the device to initiate thermal shutdown. please see section 4.0, thermal considerations, of this data sheet for more details. 7: the minimum v in has to meet two conditions: v in ? 2.7v and v in ? (v r + v dropout ). 8: the junction temperature of the device is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. the test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. tcv out v outmax v outmin ? ?? 10 6 ? v out t ?? ------------------------------------------------------------------------------------- - = downloaded from: http:///
? 2001-2012 microchip technology inc. ds21385d-page 5 tc1300 2.0 typical characteristics junction temperature (t j ) is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. the test time is small enough such that th e rise in the junction temperature over the ambient temperature is not significant. figure 2-1: line regulation vs. temperature. figure 2-2: supply current vs. temperature. figure 2-3: normalized v out vs. temperature. figure 2-4: reset active time-out period vs. temperature. figure 2-5: output noise vs. frequency. figure 2-6: dropout voltage vs. load current (2.5v). note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) line regulation (%) v out = 3.0v v in = 3.5v to 6.0v 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) supply current (ma) v out = 2.5v v out = 5.0v v out = 3.0v v in = v out + 1v 2.491 2.492 2.493 2.494 2.495 2.496 2.497 2.498 2.499 2.500 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) output voltage (v) v in = v out + 1v i out = 100 a v out = 2.5v 0 50 100 150 200 250 300 350 400 450 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) reset active time-out period (ms) 0.01 0.10 1.00 10.00 0.01 0.10 1.00 10.00 100.00 1000.00 frequency (khz) output noise (v/lhz) r load = 50 ohms c out = 1 f 1 1000 100 10 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 100 200 300 400 load current (ma) dropout voltage (v) t j = +125c t j = -40c t j = +25c v out = 2.5v downloaded from: http:///
tc1300 ds21385d-page 6 ? 2001-2012 microchip technology inc. 2.0 typical characteristics (con?t) junction temperature (t j ) is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. the test time is small enough such that the rise in the junction tempe rature over the ambient temperature is not significant. figure 2-7: power supply rejection ratio vs. frequency. figure 2-8: reset voltage threshold vs. junction temperature. figure 2-9: load regulation vs. temperature. figure 2-10: dropout voltage vs. load current (5.0v). figure 2-11: wake-up response time. figure 2-12: v det to reset delay vs. temperature. 0 15 30 45 60 10 100 1000 10000 100000 100000 frequency (hz) power supply ripple rejection (db) v in = 3.8v v out = 2.8v i out = 50 ma c out = 10 f c outesr = 0.25  c bypass = 0 f 1k 10k 100k 1m 2.6275 2.6280 2.6285 2.6290 2.6295 2.6300 2.6305 2.6310 2.6315 2.6320 2.6325 2.6330 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) reset voltage threshold (v) 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) load regulation (1 ma to 300 ma) % v in = v out + 1v v out = 3.0v v out = 2.5v v out = 5.0v 0 0.05 0.1 0.15 0.2 0.25 0.3 0 100 200 300 400 load current (ma) dropout voltage (v) t j = +125c t j = -40c t j = +25c v out = 5.0v 0 50 100 150 200 250 300 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) v det to reset delay time (s) 10 mv overdrive 100 mv overdrive downloaded from: http:///
? 2001-2012 microchip technology inc. ds21385d-page 7 tc1300 2.0 typical characteristics (con?t) junction temperature (t j ) is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. the test time is small enough such that th e rise in the junction temperature over the ambient temperature is not significant. figure 2-13: load transient response 1 f output capacitor. figure 2-14: line transient response 1 f output capacitor. figure 2-15: load transient response 10 f output capacitor. figure 2-16: line transient response 10 f output capacitor. figure 2-17: reset output voltage low vs. junction temperature. figure 2-18: reset output voltage high vs. junction temperature. 0.00 0.05 0.10 0.15 0.20 0.25 0.30 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) reset v ol (v) v det = v th - 20 mv i sink = 1.2 ma i sink = 3.2 ma 3.890 3.900 3.910 3.920 3.930 3.940 3.950 3.960 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) reset voh (v) v det = 4.0v i source = 500 a i source = 800 a downloaded from: http:///
tc1300 ds21385d-page 8 ? 2001-2012 microchip technology inc. 3.0 detailed description the tc1300 is a combination of a fixed output, low dropout regulator and a microcontroller monitor/reset . unlike bipolar regulators, the tc1300 supply current does not increase with load current. in addition, v out remains stable and within regulation over the entire specified operating load range (0 ma to 300 ma) and operating input voltage range (2.7v to 6.0v). figure 3-1 shows a typical application circuit. the reg- ulator is enabled any time the shutdown input (shdn ) is above v ih . the regulator is shutdown (disabled) when shdn is at or below v il . shdn may be con- trolled by a cmos logic gate or an i/o port of a micro- controller. if the shdn input is not required, it should be connected directly to the input supply. while in shut- down, supply current decreases to 30 a (typical), v out falls to zero and reset remains valid. 3.1 reset output the reset output is driven active-low within 160 sec of v det falling through the reset voltage threshold. reset is maintained active for a minimum of 140 msec after v det rises above the reset threshold. the tc1300 has an active-low reset output. the out- put of the tc1300 is valid down to v det = 1v and is optimized to reject fast transient glitches on the v det line. figure 3-1: typical application circuit. 3.2 output capacitor a 1 f (min) capacitor from v out to ground is required. a 1 f capacitor should also be connected from v in to gnd if there is more than 10 inches of wire between the regulator and the ac filter capacitor, or if a battery is used as the power source. as with all low dropout regulators, a minimum output capacitance is required to stabilize the output voltage. for the tc1300, a mini- mum of 1 f of output capacitance is enough to stabi- lize the device over the entire operating load and line range. the selected output capacitor plays an impor- tant role is compensating the ldo regulator. for the tc1300, the selected output capacitor equivalent series resistance (esr) range is 0.1 ohms to 5 ohms when using 1 f of output capacitance, and 0.01 ohms to 5 ohms when using 10 f of output capacitance. because of the esr requirement, tantalum and alumi- num electrolytic capacitors are recommended. alumi- num electrolytic capacitors are not recommended for operation at temperatures below -25c. when operat- ing from sources other than batteries, rejection and transient responses can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. 3.3 bypass input (optional) an optional 470 pf capacitor connected from the bypass input to ground reduces noise present on the internal reference, which in turn significantly reduces output noise and improves psrr performance. this input may be left unconnected. larger capacitor values may be used, but results in a longer time period to rated output voltage when power is initially applied. 3.4 turn on response the turn-on response is defined as two separate response categories, wake-up time (t wk ) and settling time (t s ). the tc1300 has a fast wake-up time (10 sec typi- cal) when released from shutdown. see figure 3-2 for the wake-up time designated as t wk . the wake-up time is defined as the time it takes for the output to rise to 2% of the v out value after being released from shutdown. the total turn-on response is defined as the settling time (t s ) (see figure 3-2). settling time (inclusive with t wk ) is defined as the condition when the output is within 2% of its fully enabled value (50 sec typical) when released from shutdown. the settling time of the output voltage is dependent on load conditions and output capacitance on v out (rc response). figure 3-2: wake-up response time. tc1300 12 3 4 5 6 7 8 v out c bypass 470 pf (optional) shutdown control (from power control logic) gnd bypass v in shdn v out c 1 1f reset v det nc c 2 1f battery v det + reset microcontroller v ih t s t wk v out 98% 2% v il shdn downloaded from: http:///
? 2001-2012 microchip technology inc. ds21385d-page 9 tc1300 4.0 thermal considerations 4.1 thermal shutdown integrated thermal protection circuitry shuts the regula- tor off when the die temperature exceeds 150c. the regulator remains off until the die temperature drops to approximately 140c. 4.2 power dissipation the amount of power the regulator dissipates is primar- ily a function of input and output voltage, and output current. the following equation is used to calculate worst case actual power dissipation: equation the maximum allowable power dissipation, p dmax , is a function of the maximum ambient temperature (t amax ), the maximum recommended die temperature (125c) and the thermal resistance from junction-to-air ( ? ja ). the msop-8 package has a ? ja of approximately 200c/watt when mounted on a fr4 dielectric copper clad pc board. equation the worst case actual power dissipation equation can be used in conjunction with the ldo maximum allow- able power dissipation equation to ensure regulator thermal operation is within limits. for example: find: equation: actual power dissipation equation: maximum allowable power dissipation in this example, the tc1300 dissipates a maximum of only 220 mw; below the allowable limit of 350 mw. in a similar manner, the maximum actual power dissipation equation and the maximum allowable power dissipa- tion equation can be used to calculate maximum cur- rent and/or input voltage limits. for example, the maximum allowable v in is found by substituting the maximum allowable power dissipation of 350 mw into the actual power dissipation equation, from which v in max = 4.97v. 4.3 layout considerations the primary path of heat conduction out of the package is via the package leads. therefore, layouts having a ground plane, wide traces at the pads and wide power supply bus lines combine to lower ? ja and, therefore, increase the maximum allowable power dissipation limit. p d v inmax v outmin ? ?? i loadmax ? where: p d = worst case actual power dissipation v inmax = maximum voltage on v in v outmin = minimum regulator output voltage i loadmax = maximum output (load) current p dmax t jmax t amax ? ?? ? ja ------------------------------------------- - = given: v inmax =4.1v v outmin = 3.0v -2.5% i loadmax = 200 ma t jmax = 125c t amax = 55c ? ja = 200c/w p d v inmax v outmin ? ?? i loadmax ? 4.1 ?? 3.0 .975 ? ?? ? ?? = 200 10 3 ? ? 220 mw = p dmax t jmax t amax ? ?? ? ja ------------------------------------------- - = 125 55 ? ?? 200 ------------------------- = 350 mw = downloaded from: http:///
tc1300 ds21385d-page 10 ? 2001-2012 microchip technology inc. 5.0 packaging information 5.1 package marking information part number marking code (xxxxxx) tc1300r - 2.5vua 1300ra tc1300y - 2.7vua 1300yf tc1300r - 2.8vua 1300rb tc1300r - 2.85vua 1300rc tc1300r - 3.0vua 1300rd tc1300r - 3.3vua 1300re 8-lead msop example: xxxxxxywwnnn 1300raywwnnn legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week 01) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e downloaded from: http:///
? 2001-2012 microchip technology inc. ds21385d-page 11 tc1300 5.2 package dimensions pin 1 component taping orientation for 8-pin msop devices user direction of feed standard reel component orientation for tr suffix device w p carrier tape, number of components per reel and reel size: package carrier width (w) pitch (p) part per full reel reel size 8-pin msop 12 mm 8 mm 2500 13 in. downloaded from: http:///
tc1300 ds21385d-page 12 ? 2001-2012 microchip technology inc. 8-lead plastic micro small outline package (ua) (msop) p a a1 a2 d l c dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not .037 .035 f footprint (reference) exceed .010" (0.254mm) per side. notes: drawing no. c04-111 *controlling parameter mold draft angle top mold draft angle bottom foot angle lead width lead thickness ? ? c b ? 77 .004 .010 0 .006 .012 (f) ? dimension limits overall height molded package thickness molded package width overall length foot length standoff overall width number of pins pitch a l e1 d a1 e a2 .016 .114 .114 .022 .118 .118 .002 .030 .193 .034 min p n units .026 nom 8 inches 1.00 0.95 0.90 .039 0.15 0.30 .008 .016 6 0.10 0.25 0 77 0.20 0.40 6 millimeters* 0.65 0.86 3.00 3.00 0.55 4.90 .044 .122 .028 .122 .038 .006 0.40 2.90 2.90 0.05 0.76 min max nom 1.18 0.70 3.10 3.10 0.15 0.97 max 8 ? e1 e b n 1 2 ? significant characteristic .184 .200 4.67 .5.08 note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging downloaded from: http:///
? 2001-2012 microchip technology inc. ds21385d-page 13 tc1300 6.0 revision history revision d (november 2010) added a note to each package outline drawing. downloaded from: http:///
tc1300 ds21385d-page 14 ? 2001-2012 microchip technology inc. notes: downloaded from: http:///
? 2001-2012 microchip technology inc. ds21385d-page15 tc1300 product identification system to order or obtain information, e. g., on pricing or delivery, refer to the factory or the listed sales office . sales and support data sheets products supported by a preliminary data sheet may have an e rrata sheet describing minor operational differences and recom- mended workarounds. to determine if an erra ta sheet exists for a particular device, please contact one of the following: 1. your local microchip sales office 2. the microchip worldwide site (www.microchip.com) please specify which device, revision of silicon and data sheet (include literature #) you are using. new customer notification system register on our web site (www.microchip.com/cn) to receive the most current information on our products. part no. -x.x x temperature output voltages device device: tc1300x-x.xxxx: 300ma cmos ldo w/shutdown, bypass & independent delayed reset tc1300x-x.xxxxtr: 300ma cmos ldo w/shutdown, bypass & independent delayed reset (tape and reel) output voltages: reset threshold voltages: -2.4v = y - 2.63v = r 2.5v = 2.5 2.7v = 2.7 2.8v = 2.8 2.85v = 2.85 3.0v = 3.0 3.3v = 3.3 temperature range: v = -40c to +125c package: ua = micro small outline package (msop), 8-lead examples: a) tc1300r-2.5vua: 300ma cmos ldo w/ shutdown, bypass & independent delayed reset, 2.5v output voltage, 2.63v reset threshold. b) tc1300r-2.8vua: 300ma cmos ldo w/shut- down, bypass & independent delayed reset, 2.8v output voltage, 2.63v reset threshold. c) tc1300r-2.85vua: 300ma cmos ldo w/ shutdown, bypass & independent delayed reset, 2.85v output voltage, 2.63v reset threshold. d) tc1300r-3.0vua: 300ma cmos ldo w/shut- down, bypass & independent delayed reset, 3.0v output voltage, 2.63v reset threshold. e) tc1300r-3.3vua: 300ma cmos ldo w/shut- down, bypass & independent delayed reset, 3.3v output voltage, 2.63v reset threshold. f) tc1300r-2.85vuatr: 300ma cmos ldo w/ shutdown, bypass & independent delayed reset, 2.85v output voltage, 2.63v reset threshold, tape and reel. g) tc1300y-2.7vua: 300ma cmos ldo w/ shut- down, bypass & independant delayed reset, 2.7v output voltage, 2.4v reset threshold. /xx package range downloaded from: http:///
tc1300 ds21385d-page 16 ? 2001-2012 microchip technology inc. notes: downloaded from: http:///
? 2001-2012 microchip technology inc. ds21385d-page 17 information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safety applications is entirely at the buyers risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, dspic, flashflex, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, pic 32 logo, rfpic, sst, sst logo, superflash and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mtp, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. analog-for-the-digital age, app lication maestro, bodycom, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mpf, mplab certified logo, mplib, mplink, mtouch, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, real ice, rflab, select mode, sqi, serial quad i/o, total endurance, tsharc, uniwindriver, wiperlock, zena and z-scale are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. gestic and ulpp are registered trademarks of microchip technology germany ii gmbh & co. & kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2001-2012, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. isbn: 9781620767832 note the following details of the code protection feature on microchip devices: microchip products meet the specification cont ained in their particular microchip data sheet. microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip products in a manner outside the operating specif ications contained in microchips data sheets. most likely, the person doing so is engaged in theft of intellectual property. microchip is willing to work with the customer who is concerned about the integrity of their code. neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as unbreakable. code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchips code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory an d analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management s ystem certified by dnv == iso/ts 16949 == downloaded from: http:///
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